IPDH4N03LA g ipsh4n03la g opti mos ? 2 power-transistor features ? ideal for high-frequency dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel, logic level ? excellent gate charge x r ds(on) product (fom) ? superior thermal resistance ? 175 c operating temperature ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 2) 90 a t c =100 c 77 pulsed drain current i d,pulse t c =25 c 3) 360 avalanche energy, single pulse e as i d =90 a, r gs =25 ? 150 mj reverse diode d v /d t d v /d t i d =90 a, v ds =20 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 94 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value v ds 25 v r ds(on),max (smd version) 4.2 m ? i d 90 a product summary type IPDH4N03LA g ipsh4n03la g package p-to252-3-11 p-to251-3-11 ordering code q67042-s4250 q67042-s4254 marking h4n03la h4n03la rev. 0.92 - target data sheet page 1 2004-10-27
IPDH4N03LA g ipsh4n03la g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.6 k/w smd version, device on pcb r thja minimal footprint - - 75 6 cm 2 cooling area 5) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 25 - - v gate threshold voltage v gs(th) v ds = v gs , i d =40 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =25 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =25 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =50 a - 6.1 7.6 m ? v gs =4.5 v, i d =50 a, smd version - 5.9 7.4 v gs =10 v, i d =60 a - 3.7 4.4 v gs =10 v, i d =60 a, smd version - 3.5 4.2 gate resistance r g - 1.3 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =60 a 45 90 - s 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values 1) current is limited by bondwire; with an r thjc =1.6 k/w the chip is able to carry 109 a. 3) see figure 3 4) t j,max =150 c and duty cycle d <0.25 for v gs <-5 v 1) j-std20 and jesd22 rev. 0.92 - target data sheet page 2 2004-10-27
IPDH4N03LA g ipsh4n03la g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2400 3200 pf output capacitance c oss - 920 1200 reverse transfer capacitance c rss - 110 160 turn-on delay time t d(on) - 9 14 ns rise time t r -711 turn-off delay time t d(off) -2944 fall time t f - 4.6 7 gate char g e characteristics 6) gate to source charge q gs - 8 11 nc gate charge at threshold q g(th) - 3.9 5.1 gate to drain charge q gd - 5.6 8 switching charge q sw -1014 gate charge total q g -1926 gate plateau voltage v plateau - 3.4 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 5 v -1723nc output charge q oss v dd =15 v, v gs =0 v -2027 reverse diode diode continous forward current i s - - 78 a diode pulse current i s,pulse - - 360 diode forward voltage v sd v gs =0 v, i f =78 a, t j =25 c - 0.93 1.2 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 15 nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =25 a, r g =2.7 ? v dd =15 v, i d =45 a, v gs =0 to 5 v rev. 0.92 - target data sheet page 3 2004-10-27
rev. 0.92 - target data sheet page 4 2004-10-27
IPDH4N03LA g ipsh4n03la g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0.01 0.1 1 10 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] rev. 0.92 - target data sheet page 5 2004-10-27
IPDH4N03LA g ipsh4n03la g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3 v 3.2 v 3.4 v 3.7 v 4 v 4.5 v 10 v 0 2 4 6 8 10 12 14 16 0 20406080100 i d [a] r ds(on) [m ? ] 25 c 175 c 0 20 40 60 80 100 012345 v gs [v] i d [a] 0 20 40 60 80 100 120 140 0 20406080100 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.4 v 3.7 v 4 v 4.5 v 10 v 0 10 20 30 40 50 60 70 80 90 100 0123 v ds [v] i d [a] rev. 0.92 - target data sheet page 6 2004-10-27
IPDH4N03LA g ipsh4n03la g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =60 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 5 6 7 8 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 40 a 400 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 0102030 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 0.92 - target data sheet page 7 2004-10-27
IPDH4N03LA g ipsh4n03la g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =45 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 5 v 15 v 20 v 0 2 4 6 8 10 12 0 10203040 q gate [nc] v gs [v] 20 21 22 23 24 25 26 27 28 29 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i av [a] rev. 0.92 - target data sheet page 8 2004-10-27
IPDH4N03LA g ipsh4n03la g package outline p-to252-3-11: outline footprint: packaging: dimensions in mm rev. 0.92 - target data sheet page 9 2004-10-27
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